4.7 Article

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure

Journal

SCIENTIFIC REPORTS
Volume 6, Issue -, Pages -

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/srep35597

Keywords

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Funding

  1. National Key Research and Development Plan Grant [2016YFB0401803]
  2. National Basic Research Program of China [2012CB3155605, 2013CB632804, 2014CB340002, 2015CB351900]
  3. National Natural Science Foundation of China [61574082, 61210014, 61321004, 61307024, 51561165012]
  4. High Technology Research and Development Program of China [2015AA017101]
  5. Science and Technology Planning Project of Guangdong Province [2014B010121004]
  6. Tsinghua University Initiative Scientific Research Program [2013023Z09N, 2015THZ02-3]
  7. Open Fund of the State Key Laboratory on Integrated Optoelectronics [IOSKL2015KF10]
  8. CAEP Microsystem and THz Science and Technology Foundation [CAEPMT201505]
  9. S&T Challenging Project

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The spin and optical polarization based on a coupled InGaN/GaN quantum well (QW) and quantum dots (QDs) structure is investigated. In this structure, spin-electrons can be temporarily stored in QW, and spin injection from the QW into QDs via spin-conserved tunneling is enabled. Spin relaxation can be suppressed owing to the small energy difference between the initial state in the QW and the final states in the QDs. Photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements are carried out on optical spin-injection and -detection. Owing to the coupled structure, spin-conserved tunneling mechanism plays a significant role in preventing spin relaxation process. As a result, a higher circular polarization degree (CPD) (-49.1%) is achieved compared with conventional single layer of QDs structure. Moreover, spin relaxation time is also extended to about 2.43 ns due to the weaker state-filling effect. This coupled structure is believed an appropriate candidate for realization of spin-polarized light source.

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