Ultra-high pressure annealing of Mn-implanted HVPE-GaN

Article Physics, Applied

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Jun Uzuhashi et al.

Summary: An investigation on annealing under different conditions after magnesium (Mg) implantation into GaN crystals revealed that ultra-high-pressure annealing (UHPA) effectively suppresses the formation of Mg-enriched defects, leading to improved p-type activation efficiency.

JOURNAL OF APPLIED PHYSICS (2022)

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Article Chemistry, Physical

Carbon and Manganese in Semi-Insulating Bulk GaN Crystals

Mikolaj Amilusik et al.

Summary: The co-doping of manganese and carbon in gallium nitride crystals grown by halide vapor phase epitaxy was investigated in terms of their structural, optical, and electrical properties. The results showed the significant roles of manganese and carbon in the co-doped gallium nitride crystals.

MATERIALS (2022)

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Article Physics, Applied

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Dolar Khachariya et al.

Summary: We report a novel vertical GaN junction barrier Schottky (JBS) diode with low ON-resistance and high breakdown voltage, demonstrating that high-performance GaN JBS can be achieved using Mg implantation and high-temperature UHP post-activation anneal.

APPLIED PHYSICS EXPRESS (2022)

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Article Physics, Applied

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Tetsu Kachi et al.

Summary: This study investigates the P-type doping in specific areas of gallium nitride (GaN) using magnesium (Mg)-ion implantation and subsequent ultra-high-pressure annealing (UHPA) to enhance the performance of vertical GaN power devices. The research demonstrates that UHPA at lower temperatures can achieve comparable activation of Mg ions and reduce annealing pressure, allowing for larger wafers to be processed. However, controlling the vertical doping profile is challenging. The study also highlights the potential applications of anisotropic diffusion of Mg in vertical device structures.

JOURNAL OF APPLIED PHYSICS (2022)

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Article Physics, Applied

Effects of the sequential implantation of Mg and N ions into GaN for p-type doping

Hideki Sakurai et al.

Summary: The study investigated the sequential implantation of Mg and N ions into GaN using different annealing methods, finding that the green luminescence related to nitrogen vacancies could be suppressed at specific Mg/N ratios while maintaining the DAP emission from Mg acceptors. Optimal Mg/N implantation and UHPA treatment improved ohmic contacts by increasing Mg concentration and suppressing V(N)s near the surface.

APPLIED PHYSICS EXPRESS (2021)

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Review Chemistry, Analytical

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Lung-Hsing Hsu et al.

Summary: GaN HEMT on Si has attracted attention for its wide applications, but faces challenges such as high defect density compromising performance and reliability. Different substrate structures like SOI are introduced to enhance epitaxy quality and enable integration with Si CMOS. The recent development of 3D hetero-integration technology shows promise for combining GaN technology and CMOS.

MICROMACHINES (2021)

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Article Chemistry, Physical