Journal
SCIENTIFIC REPORTS
Volume 6, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep28459
Keywords
-
Categories
Funding
- CICYT, Spain [MAT2010-15206]
- EU-COST Action [MP0805]
- Junta de Andalucia [P09-TEP-5403]
- EU-FEDER participation [P09-TEP-5403]
- FCT Portugal [PTDC/FIS-NAN/0973/2012, SFRH/BPD/74095/2010]
- Juan de la Cierva program [JCI-2012-14509]
- Deutsche Forschungsgemeinschaft (DFG) [MU 3660/1-1]
- DFG [R02051/11-1]
Ask authors/readers for more resources
The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
