Related references
Note: Only part of the references are listed.Oxide-based Synaptic Transistors Gated by Sol-Gel Silica Electrolytes
Feng Shao et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Investigation of the ferroelectric switching behavior of P(VDF-TrFE)-PMMA blended films for synaptic device applications
E. J. Kim et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
Classical Conditioning Mimicked in Junctionless IZO Electric-Double-Layer Thin-Film Transistors
Changjin Wan et al.
IEEE ELECTRON DEVICE LETTERS (2014)
A million spiking-neuron integrated circuit with a scalable communication network and interface
Paul A. Merolla et al.
SCIENCE (2014)
A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates
Jin-Seob Kim et al.
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS (2014)
A Carbon Nanotube Synapse with Dynamic Logic and Learning
Kyunghyun Kim et al.
ADVANCED MATERIALS (2013)
Pavlov's Dog Associative Learning Demonstrated on Synaptic-Like Organic Transistors
O. Bichler et al.
NEURAL COMPUTATION (2013)
Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor
Zhong Qiang Wang et al.
ADVANCED FUNCTIONAL MATERIALS (2012)
An Electronic Version of Pavlov's Dog
Martin Ziegler et al.
ADVANCED FUNCTIONAL MATERIALS (2012)
Structure, Sodium Ion Role, and Practical Issues for β-alumina as a High-k Solution-Processed Gate Layer for Transparent and Low-Voltage Electronics
Bo Zhang et al.
ACS APPLIED MATERIALS & INTERFACES (2011)
Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
Ting Chang et al.
ACS NANO (2011)
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
Kyungah Seo et al.
NANOTECHNOLOGY (2011)
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Sung Hyun Jo et al.
NANO LETTERS (2010)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura et al.
NATURE (2004)