Determination of spin-orbit interaction in semiconductor nanostructures via nonlinear transport

We investigate nonlinear transport signatures stemming from linear and cubic spin-orbit interactions in oneand two-dimensional systems. The analytical zero-temperature response to external fields is complemented by a finite-temperature numerical analysis, establishing a way to distinguish between linear and cubic spin-orbit interactions. We also propose a protocol to determine the relevant material parameters from transport measurements attainable in realistic conditions, illustrated by values for Ge heterostructures. Our results establish a method for the fast benchmarking of spin-orbit properties in semiconductor nanostructures.

Automated summary

We examine the nonlinear transport characteristics resulting from linear and cubic spin-orbit interactions in one-dimensional and two-dimensional systems. By combining analytical responses at zero temperature with numerical analysis at finite temperature, we establish a method to differentiate between linear and cubic spin-orbit interactions. Additionally, we propose a protocol to determine material parameters using transport measurements under realistic conditions, with Ge heterostructures as an exemplification. Our findings offer a means to rapidly benchmark spin-orbit properties in semiconductor nanostructures.