Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

A facile sol-gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching behaviors with a high resistance ratio of about two orders of magnitude, which can be maintained for over 103 s and without evident deterioration. The tunable nonvolatile multilevel resistive switching phenomena were achieved by modulating the different set voltages of the W/ZnO/ITO memory cell. In addition, the tunable nonvolatile resistive switching behaviors of the ZnO-nanofilm-based W/ZnO/ITO memory cell can be interpreted by the partial formation and rupture of conductive nanofilaments modified by the oxygen vacancies. This work demonstrates that the ZnO-nanofilm-based W/ZnO/ITO memory cell may be a potential candidate for future high-density, nonvolatile, memory applications.

Automated summary

A facile sol-gel spin coating method was used to synthesize spin-coated ZnO nanofilms on ITO substrates. The resulting W/ZnO/ITO memory cell based on ZnO nanofilms exhibited forming-free and tunable nonvolatile multilevel resistive switching behaviors with a high resistance ratio. The tunable nonvolatile resistive switching behaviors of the memory cell were achieved by modulating the set voltages.