4.6 Article

Defect engineering route to boron nitride quantum dots and edge-hydroxylated functionalization for bio-imaging

Journal

RSC ADVANCES
Volume 6, Issue 77, Pages 73939-73946

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ra12455k

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Funding

  1. Creative Research Initiative Program - National Research Foundation of Korea (NRF) [2015R1A3A2028975]

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Hexagonal boron nitride (h-BN) has considerable potential for applications owing to its attractive features including good thermal conductivity, chemical stability, and unique optical properties. However, because h-BN is chemically inert and thermally stable, it is hard to synthesize boron nitride quantum dots (BNQDs) using chemical methods such as oxidation, hetero-atom doping or functionalization. Here, we report a defect engineering method to synthesize BNQDs from h-BN using physical energy sources including an impinging process of heated iron nanoparticles, microwave irradiation and sonication. Furthermore, edge-hydroxylated functionalization was employed to enhance the intracellular uptake of the BNQDs in cells for bioimaging. The edge-hydroxylated BNQDs (EH-BNQDs) showed blue colored photoluminescence with 325 nm laser excitation, good cytotoxicity performance with approximately 100% cell viability, and a good attachment to cell surfaces. The successful endocytosis of EH-BNQDs using a cancer cell line was also demonstrated.

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