Journal
RSC ADVANCES
Volume 6, Issue 38, Pages 31668-31674Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ra26835d
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Funding
- Key Project of Chinese National Programs for Fundamental Research and Development [2010CB631002]
- National Natural Science Foundation of China [51271139, 51471130, 51171145, 51302162]
- Natural Science Foundation of Shaanxi Province [2013JM6002]
- Fundamental Research Funds for the Central Universities
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- Jiangsu Province Fundamental Research Grant [BK20130368]
- Startup Fund for Returnees from Department of Education of China
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Bismuth telluride thin films were prepared on flexible substrates by magnetron sputtering and then annealed at different temperatures. Interestingly, single-crystal Bi2Te3 nanoplates emerged on the thin films spontaneously, free of any template or catalyst. The self-formation of nanoplates could be ascribed to thermal stress, and a physical mechanism was proposed accordingly. Thermoelectric measurements illustrated that the electronic conductivity increased with annealing temperature owing to the gradually improved crystallization, but the thermal conductivity decreased as a result of enhanced scattering by the lamellar structure. This improved the figure of merit ZT of the Bi2Te3 thin films by more than 4 times and provided us a new concept to obtain high-performance thermoelectric materials.
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