Journal
RSC ADVANCES
Volume 6, Issue 107, Pages 104949-104954Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ra24084d
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Funding
- National Basic Research Program of China [2011CB808200]
- NSFC [51320105007, 11374120, 11634004, 51632002, 51572108]
- Program for Changjiang Scholars and Innovative Research Team in University [IRT_15R23]
- China Scholarship Council
- Cheung Kong Scholars Programme of China
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In this study, the high-pressure behavior of monoclinic vanadium dioxide (VO2 (M-1)) was revisited using infrared reflectivity (IR) spectroscopy, Raman spectroscopy and in situ synchrotron X-ray diffraction (XRD) up to 64.7 GPa. Upon compression, VO2 (M-1) follows the expected the structure transition sequence, M-1 -> M'(1) -> X, and we found that the structural transition from M'(1) to X phase is completed at about 59 GPa. Moreover, our IR data demonstrated that the M'(1) phase is a semiconductor within the pressure region of 11.4-43.2 GPa and became metallic with further compression, and that the X phase is metallic. Further analysis suggests that the pressure-induced metallization (PIM) of the M'(1) phase is associated with electron-electron correlations, while the PIM from the M'(1) to the X phases is relate to structural phase transitions. These results provide further insight into the PIM of VO2(M-1).
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