Journal
RSC ADVANCES
Volume 6, Issue 61, Pages 55720-55725Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ra07536c
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Funding
- Natural Science Foundation of China (NSFC) [51572216]
- NSFC [91323303]
- Industrial Science and Technology research project in Shaanxi province [2015GY005]
- 111 Program [B14040]
- Institute of Photonics and Photo-Technology, Provincial Key Laboratory of Photoelectronic Technology, Northwest University, China
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Enhanced performance of perovskite solar cells based on the application of high quality MAPbI(3-x)Cl(x) films developed via a hydrobromic acid assisted fast crystallization process is reported. A current density (J(SC)) of 21.71 mA cm(-2), an open circuit voltage (V-OC) of 0.94 V, a fill factor (FF) of 0.77 and a high power conversion efficiency (PCE) of 15.76% were obtained. Noticeably, the hydrobromic acid assisted device exhibited less hysteresis and followed a crystallization route which is several times faster than that of the traditional one-step spin-coating method. The enhancement in device performance is attributed to the increased parallel resistance, lower leakage current, reduced series resistance and stronger crystallization of the MAPbI(3-x)Cl(x) perovskite layer.
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