Journal
OPTICAL MATERIALS EXPRESS
Volume 6, Issue 7, Pages 2336-2341Publisher
OPTICAL SOC AMER
DOI: 10.1364/OME.6.002336
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Funding
- basic research program through the Daegu Gyeongbuk Institute of Science and Technology (DGIST) - Ministry of Science, ICT, and future planning of Korea [16-NB-05]
- Ministry of Science, ICT & Future Planning, Republic of Korea [16-NB-05] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Optical and photoelectric properties of Mn-doped ZnS thin films on indium-tin-oxide (ITO)/polyethylene terephthalate (PET) substrates by pulsed laser deposition (PLD) were investigated. The XRD patterns revealed that the thin film deposited at room temperature (RT) had a wurtzite phase, which changed to a sphalerite phase at a substrate temperature of approximately 100 degrees C. The transmittance of the films was approximately 87% in the visible range. The optical bandgap of the film deposited at RT was 3.29 eV, which increased to 3.361 eV with increasing substrate temperature to 200 degrees C. The photoluminescence (PL) intensity at 468 nm and the photocurrent by UV irradiation increased in proportion to the substrate temperature. The present results imply that Mn-doped ZnS films deposited on flexible PET substrates are useful for fabricating flexible optoelectronic devices such as flexible UV detectors. (C) 2016 Optical Society of America
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