Journal
NPG ASIA MATERIALS
Volume 8, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/am.2016.139
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Funding
- Natural Science Foundation of China [51472199, 11534015]
- Natural Science Foundation of Shaanxi Province [2015JM5196]
- National 111 Project of China [B14040]
- 973 program [2015CB057402]
- Fundamental Research Funds for the Central Universities
- China Recruitment Program of Global Youth Experts
- National Science Foundation [DMR-1410714]
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In this work we addressed a key challenge in realizing multiferroics-based reconfigurable magnetic devices, which is the ability to switch between distinct collective magnetic states in a reversible and stable manner with a control voltage. Three possible non-volatile switching mechanisms have been demonstrated, arising from the nature of the domain states in pervoskite PZN-PT crystal that the ferroelectric polarization reversal is partially coupled to the ferroelastic strain. Electric impulse non-volatile control of magnetic anisotropy in FeGaB/PZN-PT and domain distribution of FeGaB during the ferroelectric switching have been observed, which agrees very well with simulation results. These approaches provide a platform for realizing electric impulse non-volatile tuning of the order parameters that are coupled to the lattice strain in thin-film heterostructures, showing great potentials in achieving reconfigurable, compact, light-weight and ultra-low-power electronics.
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