Journal
NPG ASIA MATERIALS
Volume 8, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/am.2016.120
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Funding
- Australian Research Council [FT110100523, DP140100463, DP140102849]
- National Research Foundation of Korea - Ministry of Education, Science, and Technology [2011-0016133, NRF-2013S1A2A2035418]
- Department of Energy (DOE) [DE-SC0014430]
- National Natural Science Foundation of China [51302132]
- National Basic Research Program of China [2015CB654900]
- Australian Research Council [FT110100523] Funding Source: Australian Research Council
- U.S. Department of Energy (DOE) [DE-SC0014430] Funding Source: U.S. Department of Energy (DOE)
- National Research Foundation of Korea [2011-0016133] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Enhanced properties in modern functional materials can often be found at structural transition regions, such as morphotropic phase boundaries (MPB), owing to the coexistence of multiple phases with nearly equivalent energies. Strain-engineered MPBs have emerged in epitaxially grown BiFeO3 (BFO) thin films by precisely tailoring a compressive misfit strain, leading to numerous intriguing phenomena, such as a massive piezoelectric response, magnetoelectric coupling, interfacial magnetism and electronic conduction. Recently, an orthorhombic-rhombohedral (O-R) phase boundary has also been found in tensile-strained BFO. In this study, we characterise the crystal structure and electronic properties of the two competing O and R phases using X-ray diffraction, scanning probe microscope and scanning transmission electron microscopy (STEM). We observe the temperature evolution of R and O domains and find that the domain boundaries are highly conductive. Temperature-dependent measurements reveal that the conductivity is thermally activated for R-O boundaries. STEM observations point to structurally wide boundaries, significantly wider than in other systems. Therefore, we reveal a strong correlation between the highly conductive domain boundaries and structural material properties. These findings provide a pathway to use phase boundaries in this system for novel nanoelectronic applications.
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