Journal
BEILSTEIN JOURNAL OF NANOTECHNOLOGY
Volume 7, Issue -, Pages 1727-1735Publisher
BEILSTEIN-INSTITUT
DOI: 10.3762/bjnano.7.165
Keywords
active charge state control; diamond; fast charge state switching; NV centre; two-dimensional Schottky diode
Funding
- Baden-Wurttemberg Stiftung
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In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen terminated diamond surface. By changing the applied potential on the Schottky contact, we are able to actively switch single NV centres between all three charge states NV+, NV0 and NV- on a timescale of 10 to 100 ns, corresponding to a switching frequency of 10-100 MHz. This switching frequency is much higher than the hyperfine interaction frequency between an electron spin (of NV-) and a nuclear spin (of N-15 or C-13 for example) of 2.66 kHz. This high-frequency charge state switching with a planar diode structure would open the door for many quantum optical applications such as a quantum computer with single NVs for quantum information processing as well as single C-13 atoms for long-lifetime storage of quantum information. Furthermore, a control of spectral emission properties of single NVs as a single photon emitters-embedded in photonic structures for example - can be realized which would be vital for quantum communication and cryptography.
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