Journal
ADVANCED ENERGY MATERIALS
Volume 7, Issue 2, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201600952
Keywords
hydrogen; InGaN nanowires; photoanodes; solar cells; tunnel junctions
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Funding
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Climate Change and Emissions Management (CCEMC) Corporation
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Indium gallium nitride (InGaN) nanowire arrays (Eg approximate to 1.75 eV) are monolithically integrated on a Si solar cell through a Si tunnel junction. With such a nearly ideal energy bandgap configuration, a saturated photocurrent density of 16.3 mA cm-2 is achieved under AM1.5G one sun illumination. The applied-biasphoton- to-current efficiency reaches 8.3% at 0.5 V versus normal hydrogen electrode.
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