Journal
NATURE COMMUNICATIONS
Volume 7, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms11259
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Funding
- National Science Foundation of China [11274343, 11474311]
- National key foundation for exploring scientific instrument of China [2011YQ120053]
- DARPA STT-RAM program
- Non-Volatile Logic program
- NSF Nanosystems Engineering Research Centre for Translational Applications of Nanoscale Multiferroic Systems (TANMS)
- Italian MIUR [PRIN2010ECA8P3]
- NSF [DMR-1210850, DMR-1124601, ECCS-1309416]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1309416] Funding Source: National Science Foundation
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Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW(-1) at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.
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