Journal
NATURE COMMUNICATIONS
Volume 7, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms11456
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Funding
- ARO MURI [W911NF-12-1-0461]
- ARO [W911NF-12-1-0461]
- MRSEC programme at the Princeton Center for Complex Materials [NSF-DMR-1420541]
- LBNL grant
- BNL grant [DE-AC02-05CH11231, DE-SC0012704]
- DOE Office of Science by Argonne National Laboratory [DE-AC02-06CH11357]
- National Science Foundation [DMR-1410846]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1410846] Funding Source: National Science Foundation
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A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.
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