Journal
CHEMICAL SCIENCE
Volume 7, Issue 9, Pages 5753-5757Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6sc01380e
Keywords
-
Categories
Funding
- Major State Basic Research Development Program from the Ministry of Science and Technology [2013CB933501, 2015CB856505]
- National Natural Science Foundation of China
Ask authors/readers for more resources
With sp(2)-nitrogen atoms embedded in an isatin unit, a donor-acceptor (D-A) conjugated polymer AzaBDOPV-2T was developed with a low LUMO level down to -4.37 eV. The lowered LUMO level as well as the conformation-locked planar backbone provide AzaBDOPV-2T with electron mobilities over 3.22 cm(2) V(-1)s(-1) tested under ambient conditions, which is among the highest in n-type polymer field-effect transistors (FETs). Our results demonstrate that embedding electron-deficient sp(2)-nitrogen in conjugated backbones is an effective approach to develop n-type polymer semiconductors with high performance.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available