Journal
JOURNAL OF OPTICS
Volume 18, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2040-8978/18/3/035501
Keywords
second harmonic generation; bond model; polarization dependent SHG; quadrupolar contribution; silicon
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Funding
- Austrian Federal Ministry of Science, Research and Economy
- Austrian National Foundation for Research, Technology and Development
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The second harmonic generation (SHG) response was measured for arbitrarily oriented linear input polarization on Si(111) surfaces in rotational anisotropy experiments. We show for the first time, using the simplified bond hyperpolarizability model (SBHM), that the observed angular shifts of the nonlinear peaks and symmetry features-related to changes in the input polarization-help to identify the corresponding interface dipolar and bulk quadrupolar SHG sources, yielding excellent agreement with the experiment. Additionally, we evaluate for the s-in/p-out (sp) and p-in/p-out (pp)-polarization SHG intensities the contributions from the individual Si bonds. Furthermore, a relation between the four parameters arising from SBHM and six coefficients of the phenomenological SHG theory needed to reproduce experimental data is established.
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