Transfer Printing of AlGaInAs/InP Etched Facet Lasers to Si Substrates

InP-etched facet ridge lasers emitting in the optical C-band are heterogeneously integrated on Si substrates by microtransfer printing for the first time. 500 mu m x 60 mu m laser coupons are fabricated with a highly dense pitch on the native InP substrate. The laser epitaxial structure contains a 1-mu m-thick InGaAs sacrificial layer. A resist anchoring system is used to restrain the devices while they are released by selectively etching the InGaAs layer with FeCl3:H2O (1:2)at 8 degrees C. Efficient thermal sinking is achieved by evaporating Ti-Au on the Si target substrate and annealing the printed devices at 300 degrees C. This integration strategy is particularly relevant for lasers being butt coupled to polymer or silicon-on-insulator (SOI) waveguides.