Journal
SCIENCE OF ADVANCED MATERIALS
Volume 8, Issue 4, Pages 884-890Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/sam.2016.2549
Keywords
BCl3; Plasma Doping; Trapped-Doping; Multilayer Graphene; Low Damage
Funding
- Nano Material Technology Development Program, through National Research Foundation of Korea - Ministry of Education, Science and Technology [2012M3A7B4035323]
- Ministry of Trade, Industry and Energy [10048504]
- Korea Semiconductor Research Consortium support program for the development of the future semiconductor device
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In this paper, we use low energy BCl3 plasma for the doping of graphene, and investigate its effect on graphene sheet resistance. In particular, for few-layer graphene, we use a cyclic trap-doping technique to control the dopants between the graphene layers. By using the cyclic tra-doping with the low energy BCl3 plasma, we obtain significant reduction of sheet resistance (similar to 75%), while maintaining high optical transparency, flexibility, conductivity, and thermal stability. Raman data show that the graphene layers are p-type doped with no noticeable damage during the doping. By optimizing the doping condition, we obtain sheet resistance and optical transmittance of BCl3 doped trilayer graphene of 100 Omega/sq and 92% at 550 nm, respectively, which is very compatible with flexible display devices.
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