Journal
VACUUM
Volume 130, Issue -, Pages 109-112Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2016.05.010
Keywords
Perovskite; Memory; Resistive switching
Funding
- National Natural Science Foundation of China [61377027]
- Natural Science Foundation of Fujian Province [2013J01233]
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In this work, a resistance switching memory based on organic/inorganic hybrid perovskites (OIHPs) was fabricated. The CH3NH3PbI3 perovskite was grown on polymethyl methacrylate (PMMA) as the resistance switching layer by using a two-step spin-coating procedure. The conduction mechanisms of indium-tin oxide (ITO)/PMMA/CH3NH3PbI3/PMMA/Ag device were investigated in terms of current voltage characteristics. The memory device is reprogrammable and the ON/OFF ratio reaches as high as 10(3). Endurance cycle of the as-fabricated memory device was also carried out. The results indicate the promising electronic application of OIHPs in resistance switching memories. (C) 2016 Elsevier Ltd. All rights reserved.
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