Journal
THIN SOLID FILMS
Volume 619, Issue -, Pages 317-322Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2016.10.044
Keywords
Dynamic random access memory; Atomic layer deposition; High-kappa dielectrics; Zirconia; ZrO2; Oxygen vacancy kappa
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Funding
- National Research Foundation of Korea (NRF) grant - Korean government (MEST) [NRF-2015R1A2A1A10052324]
- Nano.Material Technology Development Program through NRF - Ministry of Science, ICT and Future Planning [NRF-2014M3A7B4049368]
- National Research Foundation of Korea [2014M3A7B4049368] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, we report the effect of process conditions on the crystallinity and energy band structure of atomic layer deposition (ALD) ZrO2 films deposited, using tris(dimethylamino) cyclopentadienyl zirconium as a precursor and ozone as a reactant. ZrO2 films exhibited systematic changes in phase and energy band gap as a function of the ozone concentration. The crystal phase was transformed from the monoclinic phase to a tetragonal phase in the presence of higher ozone concentrations. In addition, spectroscopic ellipsometry measurements showed that the optical band gap and oxygen vacancy defects decreased with increasing ozone concentration. The valence band maximum also shifted closer to the Fermi energy level with increasing ozone concentration. The change in electronic structure driven by a high concentration of ozone led to reduced leakage current density and a high dielectric constant in the ZrO2-based metal-insulator-metal capacitors. These improvements were not observed for depositions performed using conventional ZrO2 ALD with oxygen and water reactants. (C) 2016 Published by Elsevier B.V.
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