Journal
THIN SOLID FILMS
Volume 611, Issue -, Pages 39-45Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2016.05.026
Keywords
Germanium nanoparticles; Metal-oxide-semiconductor structure; Nonvolatile memory; Low-pressure chemical vapor deposition; Fowler-Nordheim tunneling
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Funding
- Coordination for the Improvement of Higher Education Personnel (CAPES) from Brazil
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In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 mu m of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. (C) 2016 Elsevier B.V. All rights reserved.
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