Related references
Note: Only part of the references are listed.Lasing in direct-bandgap GeSn alloy grown on Si
S. Wirths et al.
NATURE PHOTONICS (2015)
Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
Benjamin R. Conley et al.
OPTICS EXPRESS (2014)
Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn
Michael Oehme et al.
THIN SOLID FILMS (2014)
Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
M. Oehme et al.
JOURNAL OF CRYSTAL GROWTH (2013)
Ge1-xSnx Materials: Challenges and Applications
R. Loo et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2013)
Band Gap-Engineered Group-IV Optoelectronic Semiconductors, Photodiodes and Prototype Photovoltaic Devices
Richard T. Beeler et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2013)
Germanium tin: silicon photonics toward the mid-infrared [Invited]
E. Kasper et al.
PHOTONICS RESEARCH (2013)
Growth of silicon based germanium tin alloys
E. Kasper et al.
THIN SOLID FILMS (2012)
Sn-mediated Ge/Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness
KA Bratland et al.
JOURNAL OF APPLIED PHYSICS (2005)
SnGe superstructure materials for Si-based infrared optoelectronics
MR Bauer et al.
APPLIED PHYSICS LETTERS (2003)
Self-organization of nanostructures in semiconductor heteroepitaxy
C Teichert
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS (2002)
Crystalline to amorphous phase transition in very low temperature molecular beam epitaxy
M Bauer et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2002)
Interplay of dislocation network and island arrangement in SiGe films grown on Si(001)
C Teichert et al.
THIN SOLID FILMS (2000)
Relaxed SiGe buffer layer growth with point defect injection
K Lyutovich et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2000)
Share Paper
