Journal
SURFACE & COATINGS TECHNOLOGY
Volume 291, Issue -, Pages 15-20Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2016.02.021
Keywords
Amorphous Chalcogenides; Magnetron sputtering; Thin films; Thermoelectric properties; Electrical properties
Funding
- Thailand Research Fund (TRF) through the Royal Golden Jubilee (RGJ) Ph.D. program [PHD/0126/2556]
- National Metal and Materials Technology Center, Thailand [MT-B-57-MET-07-2621, MT-B-58-MET-07-2711]
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Germanium antimony tellurium (GeSbTe) thin film has been deposited by the RF magnetron sputtering from the initial material target of the 1:1:1 atomic ratio. The GeSbTe thin film was annealed by furnace at 473 K, 523 K, 573 K and 623 K samples for 1 h under ultra-high vacuum. The samples were analyzed by X-ray diffraction (XRD), field-emission scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) to study their structure and chemical composition. The carrier concentration, charge mobility, electrical, Seebeck coefficient and power factor are reported. The as-deposited thin film showed amorphous and consequently cubic structure (c-GeSbTe) after annealing treatments. In addition, the film thickness was rapidly decreased with increasing annealing temperature. The as-deposited thin film had the atomic ratio of 1:0.6:0.7, and after annealing treatments became 1:0.9:0.9. The c-GeSbTe thin film annealed at 523 K showed the highest mobility, lowest electrical resistivity, and the highest power factor of 8.31 cm(2) V-1 S-1, 3.25 x 10(-5) Omega m, and 0.81 x 10(-4) W m(-1) K-2, respectively. (C) 2016 Elsevier B.V. All rights reserved.
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