Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 99, Issue -, Pages 226-230Publisher
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2016.02.015
Keywords
4H-SiC; Stacking fault; Partial dislocation; CL; REDG; LEEBI
Categories
Ask authors/readers for more resources
Low energy electron beam irradiation (LEEBI) effect on Shockley-type stacking faults introduced in 4H-SiC by plastic deformation have been studied by cathodoluminescence. It is shown that LEEBI does not enhance the mobility of dislocations dragging stacking faults under plastic deformation. Contrary new stacking faults are created under LEEBI. The obtained results are explained under assumption that the stacking faults introduced in 4H-SiC under deformation at moderate temperatures and by LEEBI at room temperature are dragged by partial dislocations of different types. (C) 2016 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available