Effect of annealing temperature on the optical property of high Cd content CdZnO films

CdZnO films with high Cd contents (59%) have been deposited on quartz substrate by radio-frequency (RF) magnetron sputtering. The as-deposited CdZnO films can hardly show detectable photoluminescence (PL). However, once subjected to suitable annealing temperature, the CdZnO films exhibit pronounced PL. Furthermore, when the annealing temperature at 300 degrees C and above, that the CdZnO are changed from the single phase of the rs structure to involving w, zb, and rs phases. Consequently, reliable formation and optical property improvement of the CdZnO layers are achieved through annealing temperature at 300 degrees C. (C) 2016 Elsevier Ltd. All rights reserved.