4.3 Article

Contact resistance study of various metal electrodes with CVD graphene

Journal

SOLID-STATE ELECTRONICS
Volume 125, Issue -, Pages 234-239

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2016.07.008

Keywords

Chemical vapor deposited (CVD) graphene; Contact resistance; Graphene transfer; Rapid thermal annealing; Transfer length method (TLM)

Funding

  1. European Commission through an ERC starting grant (InteGraDe) [307311]
  2. FP7 project (GRADE) [317839]
  3. German Research Foundation (DFG) [LE 2440/1-1]
  4. German BMBF (NanoGraM) [03XP0006C]

Ask authors/readers for more resources

In this study, the contact resistance of various metals to chemical vapor deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying channel widths and separation between contacts have been fabricated and electrically characterized in ambient air and vacuum condition. Electrical contacts are made with five metals: gold, nickel, nickel/gold, palladium and platinum/gold. The lowest value of 92 Omega mu m is observed for the contact resistance between graphene and gold, extracted from back-gated devices at an applied back-gate bias of -40 V. Measurements carried out under vacuum show larger contact resistance values when compared with measurements carried out in ambient conditions. Post processing annealing at 450 degrees C for 1 h in argon-95%/hydrogen-5% atmosphere results in lowering the contact resistance value which is attributed to the enhancement of the adhesion between metal and graphene. The results presented in this work provide an overview for potential contact engineering for high performance graphene-based electronic devices. (C) 2016 Elsevier Ltd. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.3
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available