4.3 Article

The effect of annealing temperatures to prepare ZnO seeds layer on ZnO nanorods array/TiO2 nanoparticles photoanode

Journal

SOLID-STATE ELECTRONICS
Volume 116, Issue -, Pages 15-21

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2015.11.004

Keywords

ZnO nanorods; TiO2 nanoparticles; Annealing; Electrochemical impedance spectroscopy

Funding

  1. Department & Graduate School of Electronic Engineering, National Yunlin University of Science and Technology

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In this study, we have fabricated a ZnO nanorods array/TiO2 nanoparticles thin-film as a photoanode, and also investigated the annealing effect at various temperatures (as grown, 250 degrees C, 350 degrees C, 450 degrees C and 550 degrees C) on ZnO seeds layer. The material properties of ZnO nanorods array were investigated by field emission scanning electron microscopy (FE-SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and ultraviolet visible spectroscopy. Besides, the performances of solar cells were evaluated using a source meter (Keithley 2400), which included open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (F.F.) and power conversion efficiency (eta%) at one sun (A.M. 1.5G, 100 mW/cm(2)). The electrochemical properties of the cells were analyzed by electrochemical impedance spectroscopy (EIS). From the EIS results, the cell performances were affected by annealing temperature, especially the fill-factor, at an annealing temperature of 550 degrees C due to the annealing treatment can enhance the connection between the interfaces of ZnO seeds/TCO, improving the electron lifetime, reducing the electron recombination loss. Finally, the sample annealing at 550 degrees C has the highest fill-factor of 44, power conversion efficiency of 0.19%, the highest Rct2 of 162.8 X and long electron lifetime of 7.25 ms. (C) 2015 Published by Elsevier Ltd.

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