Journal
SOLID-STATE ELECTRONICS
Volume 124, Issue -, Pages 54-57Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2016.06.009
Keywords
GaN; MIS-HEMT; Surface treatment; Leakage current; Breakdown voltage; TMAH
Funding
- National Research Foundation of Korea (NRF) - the Ministry of Education, Science and Technology [2013-011522, 2011-0016222, 2016R1C1B2015979]
- Samsung Electronics Co.
- Global Ph.D. Fellowship Program through the NRF - the MEST [2013H1A2A1034363]
- BK21 Plus project - the Ministry of Education, Korea [21A20131600011]
- National Research Foundation of Korea [2016R1C1B2015979] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The pre-passivation surface treatment process with tetramethylammonium hydroxide (TMAH)-based wet solution was proposed for the minimization of the leakage current (I-leak) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). This process step contributes to the simultaneous decrease of the surface current (I-surf) in the active region of device and mesaisolated region by removing the surface states and traps related to nitrogen (N) vacancy, Ga-oxide, and dangling bonds. Using the surface treatment, the fabricated device achieves a lower off-state current (I-off) of similar to 10(-12) A/mm, a higher on/off current ratio (I-on/I-off) of similar to 10(11), a small subthreshold swing (SS) of 68.4 mV/dec. The reduced I-leak also improves breakdown voltage (BV). In addition, the interface trap density (D-it) between the SiN layer and the AlGaN surface was extracted to evaluate the quality of the SiN/GaN interface, which showed that the treatment decreases the D-it with reduction of the surface defects. (C) 2016 Elsevier Ltd. All rights reserved.
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