Journal
SOLID-STATE ELECTRONICS
Volume 115, Issue -, Pages 207-212Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2015.08.023
Keywords
Graphene; Molybdenum disulfide; Schottky barrier diode; Photodiode; Responsivity; Spectral response
Funding
- European Commission through an ERC starting Grant (InteGraDe) [307311]
- German Research Foundation (DFG) [LE 2440/1-1, GRK 1564]
- Science Foundation Ireland (SFI) [12/RC/2278, PI_10/IN.1/I3030]
- European Union Seventh Framework Programme (Graphene Flagship) [604391]
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We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type silicon (Si) substrates. Much better rectification behavior is observed from the diodes fabricated on n-Si substrates in comparison with the devices on p-Si substrates in dark condition. Also, graphene - n-Si photodiodes show a considerable responsivity of 270 mAW (1) within the silicon spectral range in DC reverse bias condition. The present results are furthermore compared with that of a molybdenum disulfide (MoS2) - p-type silicon photodiode. (C) 2015 Elsevier Ltd. All rights reserved.
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