Journal
SOLID-STATE ELECTRONICS
Volume 125, Issue -, Pages 39-51Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2016.07.021
Keywords
2D Semiconductors; Transition metal dichalcogenides (TMDs); Thermally assisted conversion (TAC); Hybrid devices; Sensors; Photodiodes
Funding
- Science Foundation Ireland (SFI) [12/RC/2278, PI_10/IN.1/I3030]
- European Union Seventh Framework Programme (Graphene Flagship) [604391]
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Two-dimensional (2D) transitional metal dichalcogenides (TMDs) are of major interest to the research and electrical engineering community. A number of TMDs are semiconducting and have a wide range of bandgaps, they can exhibit n- or p-type behaviour, and the electronic structure changes with the number of layers. These exceptional properties hold much promise for a host of electrical applications including low-or high power field-effect transistors, sensors and diodes. Moreover, the unique optical properties of TMDs make them attractive for optoelectronic applications such as light-emitting diodes, photodiodes, and photovoltaic cells. A prerequisite for all of these applications is a synthesis route which is well controlled, scalable, reproducible and compatible with semiconductor industry process flows. Thermally assisted conversion (TAC), a variant of chemical vapour deposition, shows much promise for meeting these requirements. Herein we review the current progress and challenges of research on 2D semiconducting materials for electronics with a special focus on TAC produced TMD thin films. (C) 2016 Elsevier Ltd. All rights reserved.
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