☆ 4.8 Article

Physically Transient Resistive Switching Memory Based on Silk Protein

SMALL (2016)

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Journal

SMALL
Volume 12, Issue 20, Pages 2715-2719

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201502906

Keywords

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Categories

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

Funding

  1. National Research Foundation, Prime Minister's Office, Singapore [NRF-CRP13-2014-02]
  2. NTU-A*STAR Silicon Technologies Centre of Excellence [11235100003]
  3. National Natural Science Foundation of China [61574107, 51503167]
  4. Fundamental Research Funds for the Central Universities [JB151402]

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