4.8 Review

Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations

Journal

SMALL
Volume 12, Issue 10, Pages 1252-1294

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201502546

Keywords

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Funding

  1. National Natural Science Foundation of China [21372225, 20873159, 91222203, 91233205, 91433115]
  2. Ministry of Science and Technology of China [2011CB808400, 2011CB932300, 2013CB933400, 2013CB933500, 2013CB834504]
  3. Chinese Academy of Sciences [XDB12030300, XDA09030200, 1731300500015]
  4. Beijing NOVA Programme [Z131101000413038]
  5. Beijing Local College Innovation Team Improve Plan [IDHT20140512]

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Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs.

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