Journal
SENSORS AND ACTUATORS A-PHYSICAL
Volume 243, Issue -, Pages 117-122Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2016.03.018
Keywords
Lead-free BNT-ST films; CeO2/YSZ buffered Si (001) substrate; Pulsed laser deposition; Epitaxial relationship; Ferroelectric property
Funding
- National Research Foundation of Korea (NRF) - Korean government (MSIP) [NRF-2013R1A4A1069528]
- Human Resource Training Program for Regional Innovation and Creativity through the Ministry of Education
- National Research Foundation of Korea [NRF-2014H1C1A1066896]
- National Research Foundation of Korea [2013R1A4A1069528] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Lead-free BNT-ST and La0.5Ni0.5O3 (LNO) bottom electrode films were epitaxially grown onto CeO2/YSZ (yttria stabilized zirconia) buffered Si (001) substrates via pulsed laser deposition. The lattice alignment of CeO2/YSZ and BNT-ST/LNO showed 45 degrees twisted cube-on-cube epitaxial relationship, indicating high crystallinity for the BNT-ST and LNO films. The constituent elements in the BNT-ST/LNO/CeO2/YSZ structure showed no distinct diffusion between the layers. The BNT-ST epitaxial films demonstrated ferroelectric properties, but exhibited a high degree of leakage current density. (C) 2016 Elsevier B.V. All rights reserved.
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