Journal
SEMICONDUCTORS
Volume 50, Issue 3, Pages 404-410Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S1063782616030155
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- Cree Res. Inc.
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The possibility of creating a high-voltage SiC thyristor with an n-type blocking base is analyzed. It is shown that a thyristor structure fabricated as an analog of a modern thyristor structure with a p-type blocking base, i.e., with the same layer thicknesses and replaced doping types (donors instead of acceptors, and vice versa), cannot be turned-on at any input signal level. At room temperature, a structure with an n-type blocking base and acceptable parameters can only be obtained in the absence of a stop layer. In this case, however, the maximum blocking voltage is approximately two times lower than that for a thyristor with a p-type blocking base of the same thickness. In the presence of a stop layer, a portion of an S-shaped negative differential resistance appears at room temperature in the forward current-voltage characteristic of the thyristor with an n-type blocking base. This effect is due to the violation and subsequent restoration of neutrality. At ambient temperatures of T a parts per thousand yen 150A degrees C, the current-voltage characteristics of the thyristor with the n-type blocking base become quite acceptable even in the presence of a stop layer.
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