Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 32, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/32/1/015007
Keywords
GaAsBi; type-II quantum well; molecular beam epitaxy; kp method; photoluminescence
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Funding
- National Basic Research Program of China [2014CB643902]
- Key Program of Natural Science Foundation of China [61334004]
- Natural Science Foundation of China [61404152]
- 'Strategic Priority Research Program' of the Chinese Academy of Sciences [XDA5-1]
- foundation of National Laboratory for Infrared Physics
- Key Research Program of the Chinese Academy of Sciences [KGZD-EW-804]
- Creative Research Group Project of Natural Science Foundation of China [61321492]
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InxGa(1-x)As/GaAs1-yBiy/InxGa1-xAs (0.20 <= x <= 0.22, 0.035 <= y <= 0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type- I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k . p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 mu m.
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