Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 32, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/32/1/013003
Keywords
boron nitride nanotubes; macroscopic assemblies of boron nitride nanotubes; scalable manufacturing
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Funding
- NRC-Security Materials Technology Program
- Korea Institute of Science and Technology (KIST) institutional program
- Ministry of Science & ICT (MSIT), Republic of Korea [2E27240] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Boron nitride nanotubes (BNNTs) are wide bandgap semiconducting materials with a quasiparticle energy gap larger than 6.0 eV. Since their first synthesis in 1995, there have been considerable attempts to develop novel BNNT-based applications in semiconductor science and technology. Inspired by carbon nanotube synthesis methods, many BNNT synthesis methods have been developed so far; however, it has been very challenging to produce BNNTs at a large scale with the structural quality high enough for exploring practical applications. Very recently there has been significant progress in the scalable manufacturing of high-quality BNNTs. In this article, we will review those particular breakthroughs and discuss their impact on semiconductor industries. Freestanding BNNT assemblies such as transparent thin films, yarns or buckypapers are highly advantageous in the development of novel BNNT-based semiconductor devices. The latest achievements in their manufacturing processes will be also presented along with their potential applications.
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