Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 31, Issue 11, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/31/11/115008
Keywords
electron g factor; semiconductor quantum wells; spin-orbit interaction
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Funding
- FAPESB/PRONEX
- FAPESP [2014/09878-1, 2016/03845-9]
- CNPq [303304/2010-3, 506194/2013-2, 170145/2013-1]
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The electron effective g factor tensor in asymmetric III-V semiconductor quantum wells (AQWs) and its tuning with the structure parameters and composition are investigated with envelope-function theory and the 8 x 8k . p Kane model. The spin-dependent terms in the electron effective Hamiltonian in the presence of an external magnetic field are treated as a perturbation and the g factors g(perpendicular to)* and g(parallel to)*, for the magnetic field in the QW plane and along the growth direction, are obtained analytically as a function of the well width L. The effects of the structure inversion asymmetry (SIA) on the electron g factor are analyzed. For the g-factor main anisotropy Delta g = g(perpendicular to)*-g(parallel to)*. in AQWs, a sign change is predicted in the narrow well limit due to SIA, which can explain recent measurements and be useful in spintronic applications. Specific results for narrow-gap AlSb/InAs/GaSb and AlxGa1-xAsGaAs/AlyGa1-yAs AQWs are presented and discussed with the available experimental data; in particular InAs QWs are shown to not only present much larger g factors but also a larger g-factor anisotropy, and with the opposite sign with respect to GaAs QWs.
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