Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 31, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/31/4/043002
Keywords
germanium; silicon; photonics; electronics; CMOS; light source; monolithic integration
Categories
Funding
- EPSRC Standard Grant [EP/M009416/1]
- EPSRC Manufacturing Fellowship [EP/M008975/1]
- EU FP7 Marie-Curie Carrier-Integration-Grant [PCIG13-GA-2013-618116]
- University of Southampton Zepler Institute Research Collaboration Stimulus Fund
- Engineering and Physical Sciences Research Council [EP/M009416/1, EP/M008975/1] Funding Source: researchfish
- EPSRC [EP/M008975/1, EP/M009416/1] Funding Source: UKRI
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Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with complementary metal-oxide-semiconductor processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.
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