Journal
SCRIPTA MATERIALIA
Volume 125, Issue -, Pages 58-62Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2016.08.004
Keywords
Silicon carbide; Irradiation defects; Raman spectroscopy
Categories
Funding
- U.S. Department of Energy (DOE), Office of Fusion Energy Sciences
- U.S. Department of Energy (DOE), Office of Nuclear Energy for the Fuel Cycle Research & Development program [DE-AC05-00OR22725]
- Oak Ridge National Laboratory
- High Flux Isotope Reactor - DOE Office of Basic Energy Sciences
- U.S. DOE
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Raman spectra from polycrystalline beta-silicon carbide (SiC) were collected following neutron irradiation at 380-1180 degrees C to 0.011-1.87 displacement per atom. The longitudinal optical (LO) peak shifted to a lower frequency and broadened as a result of the irradiation. The changes observed in the LO phonon line shape and position in neutron-irradiated SiC are explained by a combination of changes in the lattice constant and Young's modulus, and the phonon confinement effect. The phonon confinement model reasonably estimates the defect-defect distance in the irradiated SiC, which is consistent with results from previous experimental studies and simulations. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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