Journal
CHINESE PHYSICS LETTERS
Volume 32, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/32/8/088401
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Funding
- National Basic Research Program of China [2012CB619303]
- National High-Technology Research and Development Program of China [2011AA050514]
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We report on fabrication and photovoltaic characteristics of InxGa1-xN/GaN multiple quantum well solar cells with different indium compositions and barrier thicknesses. The as-grown samples are characterized by high-resolution x-ray diffraction and reciprocal space mapping. The results show that the sample with a thick barrier thickness (10.0 nm) and high indium composition (0.23) has better crystalline quality. In addition, the dark current density-voltage (J-V) measurement of this device shows a significant decrease of leakage current, which leads to high open-circuit voltage V-oc. Through the J-V characteristics under an Air Mass 1.5 Global (AM 1.5 G) illumination, this device exhibits a V-oc of 1.89 V, a short-circuit current density J(sc) of 3.92 mA/cm(2) and a fill factor of 50.96%. As a result, the conversion efficiency (eta) is enhanced to be 3.77% in comparison with other devices.
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