Journal
CHINESE PHYSICS LETTERS
Volume 32, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/32/8/084203
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Funding
- National Natural Science Foundation of China [61274046, 61474111, 61321063]
- National High-Technology Research and Development Program of China [2013AA014202]
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We report the simulation and experimental results of 1.3-mu m InGaAsP/InP multiple quantum well (MQW) electro-absorption modulators (EAMs). In this work, the quantum confined Stark effect of the EAM is systematically analyzed through the finite element method. An optimized structure of the 1.3-mu m InGaAsP/InP QW EAM is proposed for applications in 100G ethernet. Then 1.3-mu m InGaAsP/InP EAMs with f-3dB bandwidth of over 20 GHz and extinction ratio over 20 dB at 3V bias voltage are demonstrated.
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