Journal
CHINESE PHYSICS LETTERS
Volume 32, Issue 6, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/32/6/067301
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Funding
- National Basic Research Program of China [2014CB643901]
- National Natural Science Foundation of China [11274329, 61321492]
- Key Research Program of the Chinese Academy of Sciences [XDA5-1, KGZD-EW-804]
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GaSb(Bi)/Al0.2Ga0.8Sb single quantum wells are characterized by a Fourier transform infrared spectrometer-based photoreflectance method at 77 K. Spatially direct and indirect transitions between the electronic levels at and above the effective band gap are well resolved. The shifts of the electronic levels with Bi incorporation are identified quantitatively. The results show that the upshift of the valence band edge is clarified to be dominant, while the Bi-induced downshift of the conduction band edge does exist and contributes to the band gap reduction in the GaSbBi quantum-well layer by (29 +/- 6)%.
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