Journal
REPORTS ON PROGRESS IN PHYSICS
Volume 80, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0034-4885/80/1/016701
Keywords
nanowire; bioelectronics; biosensor; field-effect transistor; electrophysiological recording; nanotechnology
Categories
Funding
- Air Force Office of Scientific Research
- Fidelity Biosciences Fund
- National Security Science and Engineering Faculty Fellow (NSSEFF) award
- Star Family Fund
- Virginia Tech
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Semiconductor nanowires represent powerful building blocks for next generation bioelectronics given their attractive properties, including nanometer-scale footprint comparable to subcellular structures and bio-molecules, configurable in nonstandard device geometries readily interfaced with biological systems, high surface-to-volume ratios, fast signal responses, and minimum consumption of energy. In this review article, we summarize recent progress in the field of nanowire bioelectronics with a focus primarily on silicon nanowire field-effect transistor biosensors. First, the synthesis and assembly of semiconductor nanowires will be described, including the basics of nanowire FETs crucial to their configuration as biosensors. Second, we will introduce and review recent results in nanowire bioelectronics for biomedical applications ranging from label-free sensing of biomolecules, to extracellular and intracellular electrophysiological recording.
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