Journal
CHINESE PHYSICS B
Volume 24, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/24/4/047206
Keywords
graphene; field effect transistor; self-mixing; terahertz detection
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Funding
- National Natural Science Foundation of China [61271157, 61401456, 11403084]
- Jiangsu Provincial Planned Projects for Postdoctoral Research Funds [1301054B]
- Fund from Suzhou Industry Technology Bureau [ZXG2012024]
- China Postdoctoral Science Foundation [2014M551678]
- Graduate Student Innovation Program for Universities of Jiangsu Province [CXLX12_0724]
- Fundamental Research Funds for the Central Universities [JUDCF 12032]
- Fund from National University of Defense Technology [JC13-02-14]
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We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is coupled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposition and then transferred onto an SiO2/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 nW/Hz(1/2). Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.
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