Journal
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
Volume 62, Issue 2, Pages 371-397Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.pcrysgrow.2016.04.020
Keywords
Heusler; Full-Heusler; Half-Heusler; Spintronics; Semiconductors; Half-metals; Magnetism; Spin polarization; Schottky barrier; Co2MnSi; Co2FeSi; Fe3Ga; GaAs; NiMnSb; Spin transfer torque; Magnetic random access memory; MRAM; STT-RAM; MgO; GaAs; Tunneling anisotropic magnetoresistance (TAMR); Spin valve; Magnetic tunnel junction; MTJ; Spin polarization; Valence electron count (VEC); Slater Pauling; Spin-LED; Thermodynamic stability; Lattice mismatch; Spin-FET; Perpendicular magnetization; Non-local voltage; Molecular beam epitaxy; MBE; Sputtering; Density of states; Point defects; Stoichiometry; Reflection high energy electron diffraction; RIMED; Magnetic moment
Ask authors/readers for more resources
Heusler compounds are a large group of intermetallic compounds with over 1000 members with similar crystal structures having a vast array of tunable properties. These properties depend on the number of valence electrons per formula unit allowing tuning of properties through composition and alloying. The Hensler lattice parameters span many metal oxides and semiconductors and their crystal structures are closely related. For spintronic applications, the magnetic and half-metallic properties, in particular, are of great interest. In this paper the electronic and magnetic properties of Heusler compounds are discussed as well as the importance of composition and defect control on tailoring their properties. Examples of applications include the great success of Hensler magnetic tunnel junction in metallic spintronic devices. The potential of going beyond metallic spintronics to the integration of Heusler compounds with III-V semiconductors for semiconductor spintronics device physics and technology, the tuning of magnetic properties, and the fabrication of Heusler compound heterostructures and superlattices are also discussed. (C) 2016 Published by Elsevier Ltd.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available