Journal
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
Volume 114, Issue 2, Pages 233-238Publisher
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1617186114
Keywords
inverted OLEDs; electron injection; electron transport; amorphous oxide semiconductor; low work function material
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Funding
- Ministry of Education, Culture, Sports, Science and Technology Element Strategy Initiative
- Japan Society for the Promotion of Science [16H06795]
- Grants-in-Aid for Scientific Research [16H06795] Funding Source: KAKEN
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Efficient electron transfer between a cathode and an active organic layer is one key to realizing high-performance organic devices, which require electron injection/transport materials with very low work functions. We developed two wide-bandgap amorphous (a-) oxide semiconductors, a-calcium aluminate electride (a-C12A7:e) and a-zinc silicate (a-ZSO). A-ZSO exhibits a low work function of 3.5 eV and high electron mobility of 1 cm(2)/(V . s); furthermore, it also forms an ohmic contact with not only conventional cathode materials but also anode materials. A-C12A7:e has an exceptionally low work function of 3.0 eV and is used to enhance the electron injection property from a-ZSO to an emission layer. The inverted electron-only and organic light-emitting diode (OLED) devices fabricated with these two materials exhibit excellent performance compared with the normal type with LiF/Al. This approach provides a solution to the problem of fabricating oxide thin-film transistor-driven OLEDs with both large size and high stability.
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