Journal
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
Volume 114, Issue 1, Pages E1-E8Publisher
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1615645114
Keywords
antimonide; membranes; transfer; infrared; integration
Categories
Funding
- CNPq
- LNLS
- Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP)
- Air Force Research Laboratory [FA9453-14-1-0248]
- University of New Mexico Microelectronics Endowed Chair
Ask authors/readers for more resources
Antimonide compounds are fabricated in membrane form to enable materials combinations that cannot be obtained by direct growth and to support strain fields that are not possible in the bulk. InAs/(InAs, Ga) Sb type II superlattices (T2SLs) with different in-plane geometries are transferred from a GaSb substrate to a variety of hosts, including Si, polydimethylsiloxane, and metal-coated substrates. Electron microscopy shows structural integrity of transferred membranes with thickness of 100 nm to 2.5 mu m and lateral sizes from 24 x 24 mu m(2) to 1 x 1 cm(2). Electron microscopy reveals the excellent quality of the membrane interface with the new host. The crystalline structure of the T2SL is not altered by the fabrication process, and a minimal elastic relaxation occurs during the release step, as demonstrated by X-ray diffraction and mechanical modeling. A method to locally strain-engineer antimonide-based membranes is theoretically illustrated. Continuum elasticity theory shows that up to similar to 3.5% compressive strain can be induced in an InSb quantum well through external bending. Photoluminescence spectroscopy and characterization of an IR photodetector based on InAs/GaSb bonded to Si demonstrate the functionality of transferred membranes in the IR range.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available